Epitaxial growth and processing issues related to strained-Si metal-oxide semiconductor field effect transistor MOSFET fabrication are discussed. The material quality of the graded Ge composition, relaxed- Si 1- x Ge x buffer layers is analyzed. The ion implants used to form complementary metal-oxide semiconductor CMOS "wells" prior to epitaxy are found to degrade the quality of these layers by introducing a high density of misfit dislocation nucleation sites. Rough surface morphology, short misfit dislocation line lengths, and high threading defect densities are correlated with the increased nucleation site density.
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Kaasbjerg, K. Phonon-limited mobility in n-type single-layer MoS 2 from first principles. B 85 , Yoon, Y. How good can monolayer MoS 2 transistors be? Ma, N. Charge scattering and mobility in atomically thin semiconductors. X 4 , Qi, J. Bandgap engineering of rippled MoS 2 monolayer under external electric field. Conley, H. Bandgap engineering of strained monolayer and bilayer MoS 2. Guzman, D. Role of strain on electronic and mechanical response of semiconducting transition-metal dichalcogenide monolayers: an ab-initio study.
Dong, L. Theoretical study on strain induced variations in electronic properties of 2H-MoS 2 bilayer sheets. Mohammad Tabatabaei, S. A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS 2 -based double gate field effect transistor. Harada, N. Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel. Wang, Y. Raman spectroscopy study of lattice vibration and crystallographic orientation of monolayer MoS 2 under uniaxial strain. Small 9 , — Zhang, K.
Self-induced uniaxial strain in MoS 2 monolayers with local van der Waals-stacked interlayer interactions. ACS Nano 9 , — Jung, Y. Bedell, S. Strain scaling for CMOS.
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