Strained-Si Heterostructure Field Effect Devices (Material Science and Engineering)


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III-V and Advanced Materials

Epitaxial growth and processing issues related to strained-Si metal-oxide semiconductor field effect transistor MOSFET fabrication are discussed. The material quality of the graded Ge composition, relaxed- Si 1- x Ge x buffer layers is analyzed. The ion implants used to form complementary metal-oxide semiconductor CMOS "wells" prior to epitaxy are found to degrade the quality of these layers by introducing a high density of misfit dislocation nucleation sites. Rough surface morphology, short misfit dislocation line lengths, and high threading defect densities are correlated with the increased nucleation site density.

In addition, the oxidation of strained Si is investigated by Rutherford backscattering and Raman spectroscopy. This site uses cookies.


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By continuing to use this site you agree to our use of cookies. To find out more, see our Privacy and Cookies policy. USA , — Ghatak, S. Nature of electronic states in atomically thin MoS 2 field-effect transistors. ACS Nano 5 , — Gomez, L. Electron transport in strained-silicon directly on insulator ultrathin-body n-MOSFETs with body thickness ranging from 2 to 25 nm. IEEE Electron.


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  8. Kaasbjerg, K. Phonon-limited mobility in n-type single-layer MoS 2 from first principles. B 85 , Yoon, Y. How good can monolayer MoS 2 transistors be? Ma, N. Charge scattering and mobility in atomically thin semiconductors. X 4 , Qi, J. Bandgap engineering of rippled MoS 2 monolayer under external electric field. Conley, H. Bandgap engineering of strained monolayer and bilayer MoS 2. Guzman, D. Role of strain on electronic and mechanical response of semiconducting transition-metal dichalcogenide monolayers: an ab-initio study.

    Dong, L. Theoretical study on strain induced variations in electronic properties of 2H-MoS 2 bilayer sheets. Mohammad Tabatabaei, S. A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS 2 -based double gate field effect transistor. Harada, N. Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel. Wang, Y. Raman spectroscopy study of lattice vibration and crystallographic orientation of monolayer MoS 2 under uniaxial strain. Small 9 , — Zhang, K.

    Self-induced uniaxial strain in MoS 2 monolayers with local van der Waals-stacked interlayer interactions. ACS Nano 9 , — Jung, Y. Bedell, S. Strain scaling for CMOS.

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    Strained-Si Heterostructure Field Effect Devices (Material Science and Engineering) Strained-Si Heterostructure Field Effect Devices (Material Science and Engineering)
    Strained-Si Heterostructure Field Effect Devices (Material Science and Engineering) Strained-Si Heterostructure Field Effect Devices (Material Science and Engineering)
    Strained-Si Heterostructure Field Effect Devices (Material Science and Engineering) Strained-Si Heterostructure Field Effect Devices (Material Science and Engineering)
    Strained-Si Heterostructure Field Effect Devices (Material Science and Engineering) Strained-Si Heterostructure Field Effect Devices (Material Science and Engineering)
    Strained-Si Heterostructure Field Effect Devices (Material Science and Engineering) Strained-Si Heterostructure Field Effect Devices (Material Science and Engineering)
    Strained-Si Heterostructure Field Effect Devices (Material Science and Engineering) Strained-Si Heterostructure Field Effect Devices (Material Science and Engineering)
    Strained-Si Heterostructure Field Effect Devices (Material Science and Engineering) Strained-Si Heterostructure Field Effect Devices (Material Science and Engineering)
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